Interface Engineering for Steep Slope Cryogenic MOSFETs

Richstein, B. (Corresponding author); Han, Y.; Zhao, Q.; Hellmich, L.; Klos, J.; Scholz, S.; Schreiber, Lars R.; Knoch, J.

New York, NY : IEEE (2022)
Journal Article

In: IEEE electron device letters
Volume: 43
Issue: 12
Page(s)/Article-Nr.: 2149-2152

Institutions

• Department of Physics [130000]
• Chair of Experimental Physics and Institute of Physics II [132210]
• Chair of Semiconductor Electronics and Institute of Semiconductor Electronics [616210]