Interface Engineering for Steep Slope Cryogenic MOSFETs
Richstein, B.; Han, Y.; Zhao, Q.; Hellmich, L.; Klos, J.; Scholz, S.; Schreiber, Lars R.; Knoch, J.
New York, NY : IEEE (2022)
Journal Article
In: IEEE electron device letters
Volume: 43
Issue: 12
Page(s)/Article-Nr.: 2149-2152
Identifier
- DOI: 10.1109/LED.2022.3217314
- RWTH PUBLICATIONS: RWTH-2023-01576